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savantic semiconductor product specification silicon npn power transistors 2SD2000 description with to-220fa package high-speed switching large collector power dissipation applications for power switching applications pinning absolute maximum ratings at tc=25 symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current 4 a i cm collector current-peak 8 a i b base current 1 a t c =25 35 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2000 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma , i b =0 60 v v cesat collector-emitter saturation voltage i c =4a;i b =0.4a 1.5 v v besat base-emitter saturation voltage i c =4a;i b =0.4a 2.0 v i cbo collector cut-off current v cb =80v;i e =0 100 a i ebo emitter cut-off current v eb =6v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =4v 70 250 h fe-2 dc current gain i c =4a ; v ce =4v 20 f t transition frequency i c =0.2a; v ce =12v;f=10mhz 80 mhz switching times t on turn-on time 0.3 s t s storage time 1.0 s t f fall time i c =4a ;i b1 =0.4a i b2 =-0.4a;v cc =50v 0.2 s h fe-1 classifications q p 70-150 120-250
savantic semiconductor product specification 3 silicon npn power transistors 2SD2000 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD2000

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